Signal Mosfet

Posted on 30-04-2021 by admin

Datasheet: MOSFET — Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89 -20 V, -760 mA Rev. 8 (124kB) Product Overview » View Reliability Data » View Material Composition » Product Change Notification Mark as Favorite. 2SJ411, datasheet for 2SJ411 - P-CHANNEL SIGNAL MOS FET FOR SWITCHING provided by NEC. 2SJ411 pdf documentation and 2SJ411 application notes, selection guide.

2N7000 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7000

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 18 V

Пороговое напряжение включения |Ugs(th)|: 3 V

Максимально допустимый постоянный ток стока |Id|: 0.35 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 1.4 nC

Время нарастания (tr): 15 ns

Выходная емкость (Cd): 20 pf

Сопротивление сток-исток открытого транзистора (Rds): 5 Ohm

Тип корпуса: TO92

2N7000 Datasheet (PDF)

0.1. 2n7000p.pdf Size:184K _1

0.2. 2n7000r3.pdf Size:77K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000N Channel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS

0.3. 2n7000-03.pdf Size:274K _philips

2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay

0.4. 2n7000 2n7002.pdf Size:626K _st

2N70002N7002N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID32N7000 60 V

0.5. 2n7000bu.pdf Size:85K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Contin

0.6. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

0.7. 2n7000ta.pdf Size:84K _fairchild_semi

0.8. 2n7000.pdf Size:94K _fairchild_semi

0.9. 2n7000.pdf Size:443K _samsung

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Fast Switching TimesRDS(on) = 5.0 Improved Inductive Ruggedness Lower Input CapacitanceID = 200 mA Extended Safe Operating Area Improved High Temperature ReliabilityTO-921231.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Cur

0.10. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

0.11. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

0.12. 2n7000g 2n7000rlra 2n7000rlrag 2n7000rlrmg 2n7000rlrpg.pdf Size:88K _onsemi

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- No

0.13. 2n7000g.pdf Size:92K _onsemi

0.14. 2n7000z.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is p

0.15. 2n7000.pdf Size:355K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product isTO-92particularly suited for low vo

0.16. 2n7000k.pdf Size:201K _auk

2N7000KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

0.17. 2n7000csm.pdf Size:28K _semelab

2N7000CSMMECHANICAL DATADimensions in mm (inches)NCHANNELENHANCEMENT MODEMOS TRANSISTOR0.51 0.10(0.02 0.004) 0.31rad.(0.012)3FEATURES V(BR)DSS = 60V21 RDS(ON) = 51.91 0.10(0.075 0.004)A0.31rad.(0.012)3.05 0.13 ID = 200mA(0.12 0.005)1.40(0.055)1.02 0.10 Hermetic Ceramic Surface Mount max.A =(0.04

0.18. 2n7000.pdf Size:358K _secos

2N7000200mA,60V,RDS(ON) 6Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-92 DDescriptionES1The 2N7000 is designed for high voltage, highspeed applications such as switching regulators,converters, solenoid and relay drives. b1SEATING PLANECe1beDrainMillimeter MillimeterREF. REF. Min. Max. Min. Max. Gat

0.19. tsm2n7000kct.pdf Size:181K _taiwansemi

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

0.20. tsm2n7000.pdf Size:85K _taiwansemi

0.21. 2n7000.pdf Size:531K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS TO-92 2N7000 MOSFET (N-Channel) 1. SOURCE FEATURES High density cell design for low RDS(ON) 2. GATE Voltage controlled small signal switch 3. DRAIN Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value

0.22. 2n7000k.pdf Size:67K _kec

Mosfet Signal Current

2N7000KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. B CFEATURESESD Protected 2000V.High density cell design for low RDS(ON).Voltage controlled small signal switch.N DIM MILLIMETERSRugged and reliable.A 4.70 MAXEKB 4.80 MAXHigh saturation current capablity. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H

0.23. 2n7000a.pdf Size:61K _kec

2N7000ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controolled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85

0.24. 2n7000.pdf Size:63K _kec

2N7000SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controlled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RA

0.25. 2n7000.pdf Size:239K _lge

2N7000 Mosfet (N-Channel)TO-921. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)ID Drain Curr

0.26. 2n7000.pdf Size:168K _wietron

WEITRON2N7000Small Signal MOSFETN-Channel3 DRAINTO-92Features:21*Low On-Resistance : 5 GATE 1. SOURCE 23*Low Input Capacitance: 60PF 2. GATE3. DRAIN*Low Out put Capacitance : 25PF1SOURCE*Low Threshole :1.4V(TYE)*Fast Switching Speed : 10nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-S

0.27. h2n7000.pdf Size:51K _hsmc

Spec. No. : HE6267HI-SINCERITYIssued Date : 1993.09.17Revised Date : 2006.08.10MICROELECTRONICS CORP.Page No. : 1/5H2N7000N-Channel Enhancement Mode TransistorDescriptionThe H2N7000 is designed for high voltage, high speed applications such as switchingregulators, converters, solenoid and relay drivers.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temp

0.28. st2n7000.pdf Size:566K _semtech

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous

0.29. h2n7000.pdf Size:423K _shantou-huashan

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

0.30. 2n7000.pdf Size:199K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2N7000FEATURESWith TO-92 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)a

Другие MOSFET... 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX, 2N6968JANTXV, 2N6969, 2N6969JANTX, 2N6969JANTXV, IRF630, 2N7000P, 2N7001, 2N7002, 2N7002L, 2N7004, 2N7005, 2N7006, 2N7007.

Список транзисторов

Обновления

Howto Connect your Hotbed (and or extruder) to a Mosfet

IMPORTANT: I have seen people trying to (re-)sell these Mosfet units with a HUGE profit on EBAY while referring to this page for installation schematics, go shop around, they don't need to be more expensive than around €5 to €10 ($5 to $10) incl PP.

Why

The idea is pretty simple: The high current of the hotbed brings multiple problems to your mainboard.All the current for the bed has to go through the one connector in addition to all the other current for the hotend, the steppers and the logic units, the default connectors are not rated for the current that goes through them when printing. Things like in the picture below happen to almost every printer at one time in its life …..

←– connector and corresponding plug —>

Removing the hotbed bed current from the mainboard, significantly reduces stress on your mainboard (connectors).

Another benefit, it will allow you to use a second PSU for bed power (12 or 24 volts).

What you need

a MOSFET unit like this, a 2 pin JST connector with some wire and some thicker wire(s) AWG 16 or AWG 14 (1,5 mm2 or 2,5 mm2)

3D-Printer-Parts-General-Add-on-Heated-Bed-Power-Expansion-Module-High-Power-Module-expansion-boardon banggood.com

How to install

A special bracket to mount your ANET mainboard and 1 mosfet unit, you can find here https://www.thingiverse.com/thing:1857006

remove the power-cables of the heated bed from the mainboard and attach them to the power output of the MOSFET unit
Connect 2 wires from the bed output of the mainboard to the control input of the MOSFET (polarity DOES NOT MATTER for this signalwire)
Connect 2 wires from the PSU (either the same as the printer, or a second PSU) to the power input if the MOSFET unit (Here polarity DOES MATTER)

For the signalwire there has been some confusion

some people claim polarity matters they are right sometimes some mosfets are polarity sensitive.

For the mosfet unit shown in the 2 pictures here, POLARITY DOES NOT MATTER, check them side by side with the signal wire connected both ways.

In both pictures the hotbed was set to preheat PLA, both led blue (D2) and Red (D1) light up and everything functions as it should.In the photo's below you can see the “bridge-rectifier” on the mosfet (just to the right of the white plug) wich corrects “wrong” connection of this wire!

Apply a second PSU ( 12 or 24 volts)

If you want your HOTBED to heatup faster you can add a second power supply unit to your printer.

Disconnect the wires from the PSU to the Mosfet Unit and apply them to the second PSU.

Apply a second Mosfet (for the extruder)

Eventhough in my opinion it is not really necessary, you might want to decide you want to use a 2nd mosfet for your extruder as well, here is a schematic you might find usefull

Of course you can use 1 (upgraded) PSU for all the 12 volts wires if you choose to

Increasing Voltage on the (stock) PSU

Near the power terminals, either on the left or the right of the terminals, is a small dial marked “ADJ +V”. Rotate it clockwise to increase voltage, and counter-clockwise to decrease it.

Always disconnect your power supply before making adjustments!

Check the voltage between one of the + and one of the - terminals, using a multimeter set for voltage DC.

PSU combinations

There are a lot of combinations possible

1 x 12 volts PSU

2 x 12 volts PSU, of the one used for the heatbed you could raise the voltage to circa 14 volts

Since there are 1 million different ATX PSU's, i will give some “general” things for you to consider only. No specifics about ONE PSU.

Check the ATX PSU you plan to use for a label like the orange one in the picture and check for maximum currents it can supply. Note that using multiple voltage outputs at the same time means less available current for the separate outputs than stated as maximum sometimes.

-For easy connecting your ATX Power Supply Unit, you could use a breakoutboard like in the picture, check your PSU for maximum power (Amps) and order some extra fuses to replace the stock 5 amp fuses that come with the unit, if you plan to draw higher currents through the breakoutboard.

An other way is to just short the green (PS-ON) and black (GROUND) wire in the 20/24 connector to make the PSU be always ON. And use the wires from the wireloom as you need them. Just make sure the specific wires are designed to supply the current you need.

1x 12 volts + 1 x 24 volts, The 12 volts one is used to power the mainboard extruder and steppermotors, the 24 volts powers the heat bed (through the mosfet)

12 volts PSU + 24 volts PSU combination

Mosfet Signal Wire

The schematic printed on the surface shows pin 1 2 and 3 representation of the element →

If wired for 12 volts, the element is doubled up, resulting in less resistance/higher current/slower heating and less poweroutput.

If wired for 24 volts, the element is connected from both ends only resulting in higher resistance/lower current/faster heating higher poweroutput.

Do the math....

HOTBED 12 Volt con. resistance betw 1.0-1.2 Ω (work with 1.1 Ω)

• I=V/R the current drawn at 12 Volts is 12/1.1= 10.9 Ampere

• P=V*I Power output at 12 Volts is 12*10.9= 130.9 Watts

HOTBED 14 Volts con. resistance betw 1.0-1.2 Ω (work with 1.1 Ω)

• I=V/R the current drawn at 14 Volts is 14/1.1= 12.7 Ampere

• P=V*I Power output at 14 Volts is 14*12.7= 178.2 Watts

HOTBED 24 volts con. resistance betw 3-3.4 Ω (work with 3.2 Ω)

• I=V/R the current drawn at 24 Volts is 24/3.2= 7.5 Ampere

• P=V*I Power output at 24 Volts is 24*7.5= 180.0 Watts

Coments are closed

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